A New Method of Measurement of the Thermal Resistance of the Silicon P-N Diodes

This paper deals with the problem of measuring the thermal resistance of silicon p-n diodes. The values of this parameter given in the catalogues rarely correspond to the real conditions of device cooling, e.g. the diode operating on the heat-sink. Therefore, the value of the thermal resistance has to be obtained from measurements. In the paper a new comfortable method of the measurement of the thermal resistance of silicon p-n diodes, based on measurements of their d.c. current-voltage characteristic and the estimation of the model parameter values with the use of PARTS-software, is presented. The results of measurements obtained by the new method are compared to the standard pulse method.